CHEMICAL MAPPING OF SEMICONDUCTOR INTERFACES AT NEAR-ATOMIC RESOLUTION - REPLY

被引：16

作者：

OURMAZD, A

CUNNINGHAM, J

机构：

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.65.2318

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：2318 / 2318

页数：1

相关论文

共 7 条

[1] PHOTOLUMINESCENCE STUDY OF INTERFACE DEFECTS IN HIGH-QUALITY GAAS-GAALAS SUPERLATTICES [J].

DEVEAUD, B ;

REGRENY, A ;

EMERY, JY ;

CHOMETTE, A .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1633-1640

[2] X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J].

FLEMING, RM ;

MCWHAN, DB ;

GOSSARD, AC ;

WIEGMANN, W ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :357-363

[3] CHEMICAL MAPPING OF SEMICONDUCTOR INTERFACES AT NEAR-ATOMIC RESOLUTION [J].

OURMAZD, A ;

TAYLOR, DW ;

CUNNINGHAM, J .

PHYSICAL REVIEW LETTERS, 1989, 62 (08) :933-936

[4]

OURMAZD A, 1989, SCIENCE, V246, P1570

[5] BAND-GAP MODULATION IN 2 DIMENSIONS BY MBE GROWTH OF TILTED SUPERLATTICES AND APPLICATIONS TO QUANTUM CONFINEMENT STRUCTURES [J].

PETROFF, PM ;

GAINES, J ;

TSUCHIYA, M ;

SIMES, R ;

COLDREN, L ;

KROEMER, H ;

ENGLISH, J ;

GOSSARD, AC .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :260-265

[6] HIGH-RESOLUTION X-RAY-DIFFRACTION STUDIES OF INGAAS(P)/INP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

VANDENBERG, JM ;

HAMM, RA ;

PANISH, MB ;

TEMKIN, H .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1278-1283

[7] DOES LUMINESCENCE SHOW SEMICONDUCTOR INTERFACES TO BE ATOMICALLY SMOOTH [J].

WARWICK, CA ;

JAN, WY ;

OURMAZD, A ;

HARRIS, TD .

APPLIED PHYSICS LETTERS, 1990, 56 (26) :2666-2668