DEPENDENCE OF ELECTRICAL-PROPERTIES ON FILM THICKNESS IN PB(ZRXTI1-X)O3 THIN-FILMS PRODUCED BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：190

作者：

SAKASHITA, Y ^{[1
]}

SEGAWA, H ^{[1
]}

TOMINAGA, K ^{[1
]}

OKADA, M ^{[1
]}

机构：

[1] CHUBU UNIV, FAC ENGN, KASUGAI, AICHI 487, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 11期

基金：

美国国家科学基金会; 美国国家卫生研究院;

关键词：

D O I：

10.1063/1.353936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strongly c-axis oriented Pb (ZrxTi1-x)O3 (PZT) thin films with tetragonal perovskite structure (0.45 < x < 0.52) were epitaxially grown on (100)Pt/(100) MgO substrates using metalorganic chemical vapor deposition. Film thickness could be varied by altering the growth time. The electrical properties of PZT thin films sharply change below a thickness of 0.5 mum: the dielectric constant and remanent polarization decrease while the coercive field increases. These phenomena are explained by a model in which a layer with low dielectric constant exists in series with the normal PZT layer. The origins of this layer are systematically studied and found to be the intrinsic stress produced by the coalescence of crystal grains.

引用

页码：7857 / 7863

页数：7

共 20 条

[1] Bursian E. V., 1970, Fizika Tverdogo Tela, V12, P1850
[2] AN EXPERIMENTAL 512-BIT NONVOLATILE MEMORY WITH FERROELECTRIC STORAGE CELL
EVANS, JT
WOMACK, R
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (05) : 1171 - 1175
[3] DIELECTRIC AND OPTICAL-PROPERTIES OF KTAO3
FUJII, Y
SAKUDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 41 (03) : 888 - 893
[4] HALL WH, 1950, J I MET, V75, P1127
[5] PREPARATION OF FERROELECTRIC (PB, LA)(ZR, TI)O3 THIN-FILMS BY SOL-GEL PROCESS AND DIELECTRIC-PROPERTIES
KAWANO, T
SEI, T
TSUCHIYA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9B): : 2178 - 2181
[6] EPITAXIAL-GROWTH OF PBTIO3 FILMS ON SRTIO3 BY RF MAGNETRON SPUTTERING
KUSHIDA, K
TAKEUCHI, H
[J]. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1991, 38 (06) : 656 - 662
[7] NAKAJIMA Y, 1974, JPN J APPL PHYS S 1, V2, P575
[8] CONTROLLING THE CRYSTAL ORIENTATIONS OF LEAD TITANATE THIN-FILMS
OGAWA, T
SENDA, A
KASANAMI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9B): : 2145 - 2148
[9] PREPARATION OF C-AXIS-ORIENTED PBTIO3 THIN-FILMS BY MOCVD UNDER REDUCED PRESSURE
OKADA, M
TAKAI, S
AMEMIYA, M
TOMINAGA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (06): : 1030 - 1034
[10] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF C-AXIS ORIENTED PZT THIN-FILMS
OKADA, M
TOMINAGA, K
ARAKI, T
KATAYAMA, S
SAKASHITA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (04): : 718 - 722

← 1 2 →