CHARGE GENERATION FROM BAND-GAP STATES IN AMORPHOUS SELENIUM FILMS

被引：26

作者：

SCHEIN, LB ^{[1
]}

机构：

[1] XEROX CORP,ROCHESTER,NY 14644

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.10.3451

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3451 / 3457

页数：7

共 28 条

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[10] THICKNESS DEPENDENCE OF HOPPING TRANSPORT IN AMORPHOUS-GE FILMS
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