EL3 SYSTEM FOR QUARTER-MICRON ELECTRON-BEAM LITHOGRAPHY

被引:13
作者
GROVES, TR [1 ]
PFEIFFER, HC [1 ]
NEWMAN, TH [1 ]
HOHN, FJ [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期
关键词
D O I
10.1116/1.584123
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2028 / 2032
页数:5
相关论文
共 17 条
  • [1] BALLANTYNE JP, 1980, ELECTRON BEAM TECHNO
  • [2] BOERSCH H, 1959, NATURWISSENSCHAFTEN, V46, P596
  • [3] BOERSCH H, 1959, NATURWISSENSCHAFTEN, V46, P21
  • [4] BROERS AN, 1978, 9TH INT C EL MICR TO, P343
  • [5] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY
    CHANG, THP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1271 - 1275
  • [6] DAVIS DE, 1983, J VAC SCI TECHNOL B, V14, P1003
  • [7] ELECTRON-BEAM BROADENING EFFECTS CAUSED BY DISCRETENESS OF SPACE-CHARGE
    GROVES, T
    HAMMOND, DL
    KUO, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1680 - 1685
  • [8] HATZAKIS M, 1969, 10 S EL ION LAS BEAM, P107
  • [9] MIELLENSTEDT G, 1960, PHYS BLATTER, V16, P192
  • [10] MOORE R, 1981, ELECTRONICS, V54, P138