SCANNING-TUNNELING-MICROSCOPY OF CO ON PT(111)

被引：6

作者：

GRUTTER, P

DURIG, UT

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The initial nucleation and subsequent growth of vapor-deposited Co on Pt(111) has been studied by scanning tunneling microscopy. The characteristic differences observed for films grown at room temperature, after annealing, and when grown at elevated substrate temperatures clearly demonstrate the delicate balance between thermodynamic equilibrium and kinetic constraints.

引用

页码：1768 / 1771

页数：4

共 13 条

[1]

BARBIER A, COMMUNICATION

[2]

CARCIA PF, 1992, APPL PHYS COMM, V11, P531

[3] SURFACE-STRUCTURE AND METAL EPITAXY - STM STUDIES OF ULTRATHIN METAL-FILMS ON AU(111) AND CU(100) [J].