RECOMBINATION PROCESSES AND GAP STATES IN HYDROGENATED AMORPHOUS-SILICON AS ELUCIDATED BY TIME-RESOLVED LUMINESCENCE MEASUREMENTS

被引：4

作者：

HIRABAYASHI, I ^{[1
]}

MORIGAKI, K ^{[1
]}

NITTA, S ^{[1
]}

机构：

[1] GIFU UNIV, FAC ENGN, KAKAMIGAHARA, GIFU 504, JAPAN

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814128

中图分类号：

学科分类号：

摘要：

引用

页码：587 / 590

页数：4

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[3]

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[4]

MORIGAKI K, 1981, ISSP1135 TECH REP A

TSANG, C ;

STREET, RA .

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[6] LUMINESCENCE DECAY IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON [J].

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STREET, RA .

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