MOLECULAR-BEAM EPITAXY AND DEPOSITION OF HIGH-TC SUPERCONDUCTORS

被引：24

作者：

HELLMAN, ES

SCHLOM, DG

MISSERT, N

CHAR, K

HARRIS, JS

BEASLEY, MR

KAPITULNIK, A

GEBALLE, TH

ECKSTEIN, JN

WENG, SL

WEBB, C

机构：

[1] STANFORD UNIV,GINZTON APPL PHYS LAB,STANFORD,CA 94305

[2] VARIAN RES CTR,PALO ALTO,CA 94303

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：799 / 803

页数：5

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