PREPARATION AND CHARACTERIZATION OF INDIUM BASED COMPLEX PEROVSKITES - PB(IN1/2NB1/2)O3 (PIN), BA(IN1/2NB1/2)O3 (BIN), AND BA(IN1/2TA1/2)O3 (BIT)

被引：9

作者：

JONES, FG

RANDALL, CA

JANG, SJ

SHROUT, TR

机构：

[1] Center for Dielectric Studies, Materials Research Laboratory, The Pennsylvania State University, PA,16802, University Park

来源：

FERROELECTRICS LETTERS SECTION | 1990年 / 12卷 / 03期

关键词：

D O I：

10.1080/07315179008201117

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The processing of order-disorder perovskites Ba(Int/oNbi n)O3 (BIN), Ba(Ini/2Taj[/2)O3 (BIT), and the lead analogue Pb(In 1/2Nb1/2)O3 (PIN) was investigated with an emphasis on improving and expanding our knowledge of microwave dielectric materials. Both BIN and BIT were shown to be paraelectric perovskites. The processing and annealing of PIN were related to the perovskite and its transformation to pyrochlore. Dielectric and physical characteristics were examined by X-ray diffraction profiles (XRD), scanning electron microscopy (SEM), and dielectric behavior. Attempts to enhance B-site cation order in PIN by thermal annealing were unsuccessful due to a pyrochlore formation. © 1990, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：55 / 62

页数：8

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