ELECTRON-MICROSCOPY STUDIES OF DEFECTS AT DIFFUSION-BONDED NB/AL2O3 INTERFACES

被引:100
作者
MADER, W [1 ]
RUHLE, M [1 ]
机构
[1] UNIV CALIF SANTA BARBARA,CTR ENGN,DEPT MAT,SANTA BARBARA,CA 93106
来源
ACTA METALLURGICA | 1989年 / 37卷 / 03期
关键词
Alumina--Bonding - Niobium Metallography--Microstructures;
D O I
10.1016/0001-6160(89)90012-6
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Single crystals of niobium and alumina were diffusion bonded at 1700°C for 2 h in a high vacuum of 10-3 Pa with an orientation relationship (110)Nb(0001)Al(2)O(3) and [001]Nb[21¯1¯0]Al(2)O(3). Specimens suitable for high resolution electron microscopy studies were prepared out of the bulk bond with foil normals parallel to [001]Nb (orientation I) and [11¯0]Nb (orientation II), respectively. HREM images revealed that no reaction layer between sapphire and niobium formed during bonding. The Al2O3 stays perfectly crystalline up to the interface, where as four (110)Nb planes adjacent to the interface are strongly distorted. HREM studies allowed the identification of facets at the interface. The facet heights are multiples of the distance between oxygen planes of the Al2O3 structure. Small angle grain boundaries and dislocations serve to adjust local misorientation from the crystal orientation relationship. A high density of dislocation networks is observed in Nb.
引用
收藏
页码:853 / 866
页数:14
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