Spectroscopic study of red light emission in porous silicon

被引：7

作者：

Prokes, SM

机构：

[1] Naval Research Laboratory, Washington

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1995年 / 1卷 / 04期

关键词：

D O I：

10.1109/2944.488692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Since bulk silicon does not emit light in the visible part of the spectrum, the discovery of visible luminescence from porous silicon has been quite surprising and has generated significant interest. This material differs from bulk silicon in one important way, in that it consists of interconnected silicon nanostructures, having very large surface to volume ratios. The first emission mechanism proposed involved carrier recombination within quantum size silicon particles, but more recent work has shown that surface emission models may be more likely. The problems with the quantum confinement model will be discussed in view of current data, and an oxygen center luminescence model will be discussed, with supporting experimental data. A direct correlation between the presence of these centers and the red photoluminescence in both as-made and oxidized PSi will be presented.

引用

页码：1140 / 1144

页数：5

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