INTRINSIC NOISE OF THE SINGLE-ELECTRON TRANSISTOR

被引：202

作者：

KOROTKOV, AN ^{[1
]}

机构：

[1] SUNY STONY BROOK, DEPT PHYS, STONY BROOK, NY 11794 USA

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.49.10381

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper is devoted to calculation of the ''classical'' (thermal and/or shot) intrinsic noise of the single-electron transistor (SET) caused by the stochastic character of electron tunneling. Exact solution of the master equation describing the dynamics of the SET is obtained in the frequency representation. The low-frequency limit for the spectral calculations is considered in detail.

引用

页码：10381 / 10392

页数：12

共 28 条

[1] ANALYTIC SOLUTION FOR THE CURRENT-VOLTAGE CHARACTERISTIC OF 2-MESOSCOPIC TUNNEL-JUNCTIONS COUPLED IN SERIES
AMMAN, M
WILKINS, R
BENJACOB, E
MAKER, PD
JAKLEVIC, RC
[J]. PHYSICAL REVIEW B, 1991, 43 (01): : 1146 - 1149
[2] THE CHARGE-EFFECT TRANSISTOR
AMMAN, M
MULLEN, K
BENJACOB, E
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 339 - 346
[3] AVERIN D, UNPUB
[4] Averin D. V., 1991, MESOSCOPIC PHENOMENA, P173
[5] AVERIN DV, 1992, NATO ADV SCI I B-PHY, V294, P311
[6] THEORY OF SINGLE-ELECTRON CHARGING OF QUANTUM-WELLS AND DOTS
AVERIN, DV
KOROTKOV, AN
LIKHAREV, KK
[J]. PHYSICAL REVIEW B, 1991, 44 (12): : 6199 - 6211
[7] THEORETICAL INVESTIGATION OF NOISE CHARACTERISTICS OF DOUBLE-BARRIER RESONANT-TUNNELING SYSTEMS
CHEN, LY
TING, CS
[J]. PHYSICAL REVIEW B, 1991, 43 (05): : 4534 - 4537
[8] NOISE CHARACTERISTICS OF SEQUENTIAL TUNNELING THROUGH DOUBLE-BARRIER JUNCTIONS
CHEN, LY
TING, CS
[J]. PHYSICAL REVIEW B, 1992, 46 (08): : 4714 - 4717
[9] GANTSEVICH SV, 1971, SOV PHYS JETP-USSR, V32, P291
[10] TUNNELING TIME AND OFFSET CHARGING IN SMALL TUNNEL-JUNCTIONS
GEERLIGS, LJ
ANDEREGG, VF
MOOIJ, JE
[J]. PHYSICA B, 1990, 165 : 973 - 974

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