JUNCTION CAPACITANCE TECHNIQUES FOR A DEEP CENTER SHOWING PHOTOTHERMAL IONIZATION, WITH GAP - NI D9 AS AN EXAMPLE

被引：3

作者：

YANG, XZ

ALLEN, JW

机构：

[1] Dept. of Phys., Beijing Normal Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 04期

关键词：

Photothermal Ionization;

D O I：

10.1088/0268-1242/6/4/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A unified description is given for the kinetics of transitions, including capture and thermal and optical emission, for a deep centre with an excited state. Simplifications appropriate to various experimental situations, especially junction space-charge measurements, are presented. A procedure for constructing a configuration coordinate diagram for correlating results of different experiments is illustrated by the example of GaP:Ni d9 with excitation and ionization.

引用

页码：243 / 249

页数：7

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