ELECTRONIC-STRUCTURE OF A SI DELTA-LAYER EMBEDDED IN GE (001)

被引：1

作者：

GULSEREN, O

CIRACI, S

机构：

[1] Dept. of Phys., Bilkent Univ., Ankara

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 10期

关键词：

Quantum Theory - Semiconducting Germanium - Semiconducting Silicon;

D O I：

10.1088/0268-1242/6/10/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using the Green function formalism with layer orbitals we studied the electronic structure of a Si delta-layer in germanium. We found two-dimensional parabolic subbands near the band edges. This approach is extended to treat the electronic structure of a single quantum well without invoking the periodically repeating models.

引用

页码：1002 / 1005

页数：4

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