ON THE POSSIBILITY OF USAGE OF CRYSTALLINE COMPOSITES IN INVESTIGATIONS OF HIGH-TC SUPERCONDUCTIVITY

Potentialities of Solid Phase Intergrowing (SPI) of crystals [5] in conformity with the investigations of HTSC are discussed. In particular the application of SPI for creation of dielectric crystalline substrates containing model boundaries (low- or high-angle, single or multiple) perpendicular to their surfaces is analyzed. Both HTSC film structures with a single boundary of a given crystallographic orientation and plain shape, and systems of such boundaries in parallel rows or with triple joints are constructed on a base of this type substrates.