VARIATION OF THE ELECTRON-PHONON MOBILITY WITH CARRIER DENSITY FOR HIGHLY DOPED AND HIGHLY EXCITED SEMICONDUCTORS

被引：13

作者：

COMBESCOT, M

BOK, J

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.35.1181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1181 / 1187

页数：7

共 10 条

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[10]

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