IONIZED IMPURITY SCATTERING IN DEGENERATE MANY-VALLEY SEMICONDUCTORS

被引：29

作者：

ROBINSON, JE

RODRIGUEZ, S

机构：

来源：

PHYSICAL REVIEW | 1964年 / 135卷 / 3A期

关键词：

D O I：

10.1103/PhysRev.135.A779

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A779 / +

共 13 条

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