STUDY OF INXGA1-XP/GAAS FILMS FORMATION ON THE BASIS OF IN-GA-P LIQUIDUS PRECISED INVESTIGATION

被引：4

作者：

BOLKHOVITYANOV, YB

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1982年 / 17卷 / 12期

关键词：

D O I：

10.1002/crat.2170171205

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

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页码：1483 / 1489

页数：7

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