INFLUENCE OF QUANTUM-WELL WIDTH ON DEVICE PERFORMANCE OF AL0.30GA0.70AS IN0.25GA0.75AS (ON GAAS) MODFETS

被引：72

作者：

NGUYEN, LD

RADULESCU, DC

FOISY, MC

TASKER, PJ

EASTMAN, LF

机构：

[1] COLUMBIA UNIV,SCH LAW,NEW YORK,NY 10027

[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[3] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 05期

关键词：

D O I：

10.1109/16.299663

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：833 / 838

页数：6

共 16 条

[1]

CHAO PC, 1983, DEC IEDM, P613

[2] GROWTH AND CHARACTERIZATION OF ALGAAS/INGAAS/GAAS PSEUDOMORPHIC STRUCTURES [J].

FISCHERCOLBRIE, A ;

MILLER, JN ;

LADERMAN, SS ;

ROSNER, SJ ;

HULL, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :620-624

[3] THE ROLE OF INEFFICIENT CHARGE MODULATION IN LIMITING THE CURRENT-GAIN CUTOFF FREQUENCY OF THE MODFET [J].

FOISY, MC ;

TASKER, PJ ;

HUGHES, B ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :871-878

[4] MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

HENDERSON, T ;

AKSUN, MI ;

PENG, CK ;

MORKOC, H ;

CHAO, PC ;

SMITH, PM ;

DUH, KHG ;

LESTER, LF .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :649-651

[5]

HENDERSON T, 1987, DEC IEDM, P418

[6]

KETTERSON AA, 1986, IEEE T ELECTRON DEVI, V33

[7]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[8]

MOLL N, 1988, IEEE T ELECTRON DEV, V35, P878

[9] A NEW LOW-NOISE ALGAAS/GAAS 2DEG FET WITH A SURFACE UNDOPED LAYER - COMMENTS [J].

NGUYEN, LD ;

TASKER, PJ ;

SCHAFF, WJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) :1187-1187

[10] 0.2-MU-M GATE-LENGTH ATOMIC-PLANAR DOPED PSEUDOMORPHIC AL0.3GA0.7AS/IN0.25GA0.75AS MODFETS WITH FT OVER 120 GHZ [J].

NGUYEN, LD ;

RADULESCU, DC ;

TASKER, PJ ;

SCHAFF, WJ ;

EASTMAN, LF .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :374-376

← 1 2 →