FORMATION OF STRUCTURE IN POLYSILICON FILMS

被引:2
作者
ALEKSANDROV, LN [1 ]
EDELMAN, FL [1 ]
VOSKOBOINIKOV, VV [1 ]
机构
[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK,USSR
关键词
D O I
10.1016/0040-6090(76)90303-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:241 / 245
页数:5
相关论文
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[1]  
ALEKSANDROV LN, 1973, DEFEKTY STRUKTURY PO, P10
[2]  
ALEKSANDROV LN, 1971, PROCESSES GROWTH SYN, P175
[3]  
ALEKSANDROV LN, 1969, THIN SOLID FILMS, V3, P395
[4]  
ALEKSANDROV LN, 1975, PROTSESSY ROSTA SINT, V1, P5
[5]  
EDELMAN FL, 1975, PROCESSES GROWTH SYN, V1, P147
[6]  
EDELMAN FL, 1974, MIKROELEKTRONIKA, V3, P421
[7]  
EDELMAN FL, 1974, MIKROELEKTRONIKA, V5, P554
[8]   A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .V. NUCLEATION KINETIC MEASUREMENTS ON (100) SURFACES [J].
JOYCE, BA ;
BRADLEY, RR ;
WATTS, BE ;
BOOKER, GR .
PHILOSOPHICAL MAGAZINE, 1969, 19 (158) :403-&