MAXIMUM POWER SPECTROSCOPY OF N-TYPE A-SI-H, C-SI, CDSE, AND INP IN NONAQUEOUS PHOTOELECTROCHEMICAL CELLS

被引：9

作者：

ROSAMILIA, JM

MILLER, B

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 02期

关键词：

D O I：

10.1149/1.2113836

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：349 / 353

页数：5

共 12 条

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[3] PHOTO-ELECTROCHEMICAL CELLS BASED ON AMORPHOUS HYDROGENATED SILICON THIN-FILM ELECTRODES AND THE BEHAVIOR OF PHOTOCONDUCTOR ELECTRODE MATERIALS
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[4] CORRELATION OF THE PHOTOELECTROCHEMISTRY OF THE AMORPHOUS HYDROGENATED SILICON METHANOL INTERFACE WITH BULK SEMICONDUCTOR PROPERTIES
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2873 - 2880
[5] N-TYPE SILICON PHOTOELECTROCHEMISTRY IN METHANOL - DESIGN OF A 10.1-PERCENT EFFICIENT SEMICONDUCTOR LIQUID JUNCTION SOLAR-CELL
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[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA-PHYSICAL SCIENCES, 1983, 80 (04): : 1152 - 1156
[6] OUTPUT STABILITY OF NORMAL-CDSE-NA2S-S-NAOH-C SOLAR-CELLS
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[7] SEMICONDUCTOR ELECTRODES .4. ELECTROCHEMICAL BEHAVIOR OF N-TYPE AND P-TYPE SILICON ELECTRODES IN ACETONITRILE SOLUTIONS
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[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1976, 80 (05) : 459 - 466
[8] LEGG KD, 1977, P NATL ACAD SCI USA, V74, P4116, DOI 10.1073/pnas.74.10.4116
[9] CHARGE-TRANSFER AND CORROSION PROCESSES AT III-V-SEMICONDUCTOR ELECTROLYTE INTERFACES
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[J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1984, 168 (1-2): : 91 - 100
[10] MAXIMUM POWER SPECTROSCOPY FOR PHOTOVOLTAIC DEVICES
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2266 - 2271

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