AN EXPLANATION FOR THE RISE IN TC IN THE TL-BASED AND BI-BASED HIGH-TEMPERATURE SUPERCONDUCTORS

被引:10
作者
BOSE, SM [1 ]
LONGE, P [1 ]
机构
[1] UNIV LIEGE,SUPRAS,INST PHYS,B-4000 LIEGE,BELGIUM
关键词
D O I
10.1088/0953-8984/2/10/020
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using the plasmon exchange model for the high-Tc superconductor, the authors show that the Tc rises with an increase in the number of CuO layers per unit cell, which is in agreement with recent observations in the Tl- and Bi-based compounds. Their calculation also shows that there is a saturation effect, i.e. that Tc cannot be raised indefinitely by increasing the number of CuO layers.
引用
收藏
页码:2491 / 2496
页数:6
相关论文
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