A HIGH-SENSITIVITY MOS PHOTO-TRANSISTOR FOR AREA IMAGE SENSOR

被引：3

作者：

MATSUNAGA, Y

YAMASHITA, H

MANABE, S

HARADA, N

机构：

[1] ULSI Research Center, Toshiba Corpration, Kawasaki, 210, 1, Komukai Toshiba-cho, Saiwai-ku

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 05期

关键词：

D O I：

10.1109/16.78377

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new MOS photo-transistor, called a "double-gate floating surface photo-transistor," has been fabricated and evaluated. In the photo-transistor cell, the gate area has been divided into two parts, the accumulation section and the detection section, in order to realize a low-input capacitance for a high optical gain. The device has achieved a noise equivalent exposure of 2 x 10(-4) lx at 16-ms integration time and a dynamic range of 75 dB with a new line potential moderation operation.

引用

页码：1044 / 1047

页数：4

共 8 条

[1] A NEW DEVICE ARCHITECTURE SUITABLE FOR HIGH-RESOLUTION AND HIGH-PERFORMANCE IMAGE SENSORS [J].

HYNECEK, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) :646-652

[2] HIGH-RESOLUTION 8-MM CCD IMAGE SENSOR WITH CORRELATED CLAMP SAMPLE AND HOLD CHARGE DETECTION CIRCUIT [J].

HYNECEK, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (06) :850-862

[3]

IZAWA T, 1987, ITEJ TECH REPS, V10, P31

[4] A NEW MOS PHOTOTRANSISTOR OPERATING IN A NON-DESTRUCTIVE READOUT MODE [J].

MATSUMOTO, K ;

NAKAMURA, T ;

YUSA, A ;

NAGAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (05) :L323-L325

[5]

MATSUNAGA Y, 1989, APCT, P195

[6]

MATSUNAGA Y, 1987, IEDM, P116

[7]

Nakamura T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P353

[8]

Yamashita H., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P78, DOI 10.1109/IEDM.1988.32755

← 1 →