HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF PROTON-IMPLANTED GALLIUM-ARSENIDE

被引：19

作者：

SADANA, DK

ZAVADA, JM

JENKINSON, HA

SANDS, T

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

[2] USA,RES OFF,RES TRIANGLE PK,NC 27709

[3] USA,CTR ARMAMENT RES & DEV,DOVER,NJ 07801

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.96060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：691 / 693

页数：3

共 10 条

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[7] TRANSMISSION ELECTRON-MICROSCOPY OF EXTENDED CRYSTAL DEFECTS IN PROTON BOMBARDED AND ANNEALED GAAS [J].

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NEETHLING, JH .

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[8]

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[9]

ZAVADA JM, 1985, P SOC PHOTO-OPT INST, V530, P182, DOI 10.1117/12.946485

[10]

ZAVADA JM, 1984, P SOC PHOTO-OPT INST, V463, P72, DOI 10.1117/12.941350

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