HIGH-EFFICIENCY GAAS MESFET AMPLIFIERS

被引：5

作者：

HUANG, HC ^{[1
]}

DRUKIER, I ^{[1
]}

CAMISA, RL ^{[1
]}

NARAYAN, SY ^{[1
]}

JOLLY, ST ^{[1
]}

机构：

[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 21期

关键词：

D O I：

10.1049/el:19750392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-efficiency cw amplification with GaAs Schottky-barrier field-effect transistors under class-B conditions has been demonstrated. Power added efficiencies as high as 68% at 4 GHz and 41% at 8 GHz have been achieved. Two-tone tests were carried out at 4 GHz. The power added efficiencies at the 3rd-order intermodulation levels of minus 20, minus 25 and minus 30 db were 49, 40 and 35%, respectively.

引用

页码：508 / 509

页数：2