PLANAR STRUCTURE ALGAAS/GAAS PIN PHOTO-DIODE GROWN BY MOCVD

被引:5
作者
ITO, M
WADA, O
MIURA, S
NAKAI, K
SAKURAI, T
机构
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D O I
10.1049/el:19830355
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:522 / 523
页数:2
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[2]   STATE-OF-THE-ART PERFORMANCE OF GAAIAS-GAAS AVALANCHE PHOTO-DIODES [J].
LAW, HD ;
NAKANO, K ;
TOMASETTA, LR .
APPLIED PHYSICS LETTERS, 1979, 35 (02) :180-182
[3]   HIGH-GAIN (P) ALGAAS-(N) GAAS HETEROJUNCTION AVALANCHE PHOTO-DIODES [J].
NOVAK, J ;
MORVIC, M ;
KORDOS, P .
SOLID-STATE ELECTRONICS, 1982, 25 (01) :82-83