MEMORY RETENTION AND SWITCHING BEHAVIOR OF METAL-FERROELECTRIC-SEMICONDUCTOR TRANSISTORS

被引：124

作者：

WU, SY ^{[1
]}

机构：

[1] WESTINGHOUSE RES LABS, PITTSBURGH, PA 15235 USA

来源：

FERROELECTRICS | 1976年 / 11卷 / 1-2期

关键词：

D O I：

10.1080/00150197608236584

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：379 / 383

页数：5

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