OPTICAL BIAS CONTROL OF DISPERSIVE RELAXATIONS IN ALPHA-SI-H

被引：22

作者：

PFOST, D ^{[1
]}

VARDENY, Z ^{[1
]}

TAUC, J ^{[1
]}

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 52卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.52.376

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：376 / 379

页数：4

共 18 条

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[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (06): : 579 - 594
[5] COMPARISON OF THE DISPERSION PARAMETERS FROM TIME-OF-FLIGHT AND PHOTOINDUCED MIDGAP ABSORPTION-MEASUREMENTS ON SPUTTERED A-SI-H
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RAY, S
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[J]. SOLID STATE COMMUNICATIONS, 1982, 42 (07) : 533 - 535
[6] PHOTOINDUCED MIDGAP ABSORPTION IN TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
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[J]. PHYSICAL REVIEW B, 1982, 25 (04): : 2748 - 2766
[7] THERMALIZATION AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
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[J]. SOLID STATE COMMUNICATIONS, 1981, 40 (01) : 85 - 89
[8] ORENSTEIN J, 1981, PHYS REV LETT, V43, P161
[9] PANDYA R, 1983, UNPUB P INT C AMORPH
[10] PHOTOINDUCED ABSORPTION STUDY OF RECOMBINATION IN AMORPHOUS SI-H DOPED WITH P OR B
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[J]. SOLID STATE COMMUNICATIONS, 1983, 48 (02) : 195 - 198

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