HEAVY-ION IRRADIATION EFFECTS ON PASSIVATED IMPLANTED PLANAR SILICON DETECTORS

被引：6

作者：

DECOSTER, W ^{[1
]}

BRIJS, B ^{[1
]}

VANDERVORST, W ^{[1
]}

BURGER, P ^{[1
]}

机构：

[1] CANBERRA SEMICOND NV,B-2430 OLEN,BELGIUM

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 64卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95482-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Commercially available p+ nn+ passivated implanted planar silicon detectors have been shown to be very performing for standard RBS-analysis with He-4 beams. Lifetimes are found to range up till > 10(9) particles. The end of lifetime occurs concurrent with internal breakdown of the detector. Inverted n+ np+ detectors where the junction is located well outside the damage region, are expected to be less sensitive to the radiation damage and to have a higher lifetime. In the present paper the characteristics for heavy-ion detection of both types of detector are investigated and discussed upon.

引用

页码：287 / 291

页数：5

共 14 条

[1]

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[2]

BURGER P, COMMUNICATION

[3]

BURGER P, 1985, 2ND INT TECHN S OPT

[4] PULSE-HEIGHT DEFECTS FOR O-16, CL-35 AND BR-81 IONS IN SILICON SURFACE-BARRIER DETECTORS [J].