GIANT INCREASE OF THE MULTIPHONON RESONANT RAMAN-SCATTERING INTENSITY IN A HIGH MAGNETIC-FIELD IN SEMICONDUCTORS WITH EQUAL EFFECTIVE MASS OF ELECTRONS AND HOLES

被引：6

作者：

BELITSKY, VI

LANG, IG

PAVLOV, ST

机构：

[1] A.F. Ioffe Physical-Technical Institute, Academy of Sciences, the USSR

来源：

PHYSICA B | 1991年 / 172卷 / 04期

关键词：

D O I：

10.1016/0921-4526(91)90005-Y

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We predict the increase of the multiphonon resonant raman scattering (MPRRS) intensity in the semiconductors with equal effective masses of the electrons m(c) and holes m(h) (InBr, InI) in a high magnetic field by alpha-4 times in comparison with the MPRRS intensity in zero magnetic field in the semiconductors with m(c) not-equal m(h), where alpha <<< 1 is the Frohlich electron-phonon constant.

引用

页码：452 / 458

页数：7

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