RECENT DEVELOPMENTS IN ULTRA-THIN OXYNITRIDE GATE DIELECTRICS

被引：27

作者：

HAN, LK

BHAT, M

WRISTERS, D

WANG, HH

KWONG, DL

机构：

[1] Microelectronics research center department of electrical, computer engineering the university of texas at austin, Austin

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0167-9317(95)00022-Z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews recent developments in N2O- and NO-based oxynitride gate dielectrics for CMOS ULSI applications. These dielectrics are extremely attractive due to their process simplicity, thickness controllability, and excellent electrical characteristics. In this paper, several issues like thickness scaling, growth kinetics, chemical composition, electrical properties, hot-carrier reliability, and EEPROM applications of these dielectrics are discussed.

引用

页码：89 / 96

页数：8

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