ON THE RESISTIVITY OF TISI2 - THE IMPLICATION FOR LOW-TEMPERATURE APPLICATIONS

被引：9

作者：

KRUSINELBAUM, L

SUN, JYC

TING, CY

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 01期

关键词：

D O I：

10.1109/T-ED.1987.22885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：58 / 63

页数：6

共 18 条

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[10] REDISTRIBUTION OF DOPANTS IN TISI2-POLYCRYSTALLINE BILAYERS DURING HEAT-TREATMENT [J].

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