GROWTH OF SI ON FLAT AND VICINAL SI(001) SURFACES - A SCANNING TUNNELING MICROSCOPY STUDY

被引：16

作者：

MO, YW

KARIOTIS, R

SWARTZENTRUBER, BS

WEBB, MB

LAGALLY, MG

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584816

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：232 / 236

页数：5

共 19 条

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[3]

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[4]

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[5]

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[6] ORDERING KINETICS AT SURFACES [J].

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KARIOTIS, R ;

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MO, YW .

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[7]

LAGALLY MG, IN PRESS KINETICS OR

[8]

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[9]

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[10] SI(100) SURFACE UNDER AN EXTERNALLY APPLIED STRESS [J].

MEN, FK ;

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WEBB, MB .

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