CHARACTERIZATION OF VACUUM-EVAPORATED TIN SULFIDE FILM FOR SOLAR-CELL MATERIALS

被引：270

作者：

NOGUCHI, H

SETIYADI, A

TANAMURA, H

NAGATOMO, T

OMOTO, O

机构：

[1] Department of Electronics, Shibaura Institute of Technology, Minato-ku, Tokyo, 108, Shibaura

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 35卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90158-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Tin sulfide (SnS) films were prepared by vacuum evaporation. As-grown SnS films showed p-type conduction with a resistivity of 13 similar to 20 Omega cm, a carrier density of 6.3 x 10(14) - 1.2 x 10(15) cm(-3), and a Hall mobility of 400 similar to 500 cm(2)/Vs. The absorption coefficients of the films were an order of 10(4) cm(-1) at the fundamental absorption edge. The n-CdS/p-SnS heterojunctions were made by depositing n-CdS, p-SnS and Ag ohmic electrode on the transparent electrode (indium-tin oxide, ITO) in the order ITO/n-CdS/p-SnS/Ag structure. The photovoltaic properties of a short-circuit current of 7 mA/cm(2), an open-circuit voltage of 0.12 V, a fill factor of 0.35, and a conversion efficiency of 0.29% were obtained under the illumination of 100 W/cm(2).

引用

页码：325 / 331

页数：7