ANOMALOUS TEMPERATURE RESISTANCE CHARACTERISTIC OF HIGHLY ACCEPTOR DOPED BATIO3 PTC RESISTORS

[1] BRAUER H, TO BE PUBLISHED

[2] Fatuzzo E., 1967, FERROELECTRICITY

[3] CURRENT - VOLTAGE CHARACTERISTICS AND CAPACITANCE OF SINGLE GRAIN-BOUNDARIES IN SEMICONDUCTING BATIO3 CERAMICS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 617 - +

[4] RESISTIVITY ANOMALY IN DOPED BARIUM TITANATE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (10) : 484 - 490

[5] SOME ASPECTS OF SEMICONDUCTING BARIUM TITANATE [J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 895 - 903

[6] Kulwicki B. M., 1970, Ferroelectrics, V1, P253, DOI 10.1080/00150197008241491

[7] MURAKAMI T, 1968, REV ELEC COMMUN LAB, V16, P551

[1] BRAUER H, TO BE PUBLISHED

[2] Fatuzzo E., 1967, FERROELECTRICITY

[3] CURRENT - VOLTAGE CHARACTERISTICS AND CAPACITANCE OF SINGLE GRAIN-BOUNDARIES IN SEMICONDUCTING BATIO3 CERAMICS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 617 - +

[4] RESISTIVITY ANOMALY IN DOPED BARIUM TITANATE [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (10) : 484 - 490

[5] SOME ASPECTS OF SEMICONDUCTING BARIUM TITANATE [J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 895 - 903

[6] Kulwicki B. M., 1970, Ferroelectrics, V1, P253, DOI 10.1080/00150197008241491

[7] MURAKAMI T, 1968, REV ELEC COMMUN LAB, V16, P551