SUPPRESSION OF THE AUGER RECOMBINATION DUE TO SPIN POLARIZATION OF EXCESS CARRIERS AND MN2+ IONS IN THE SEMIMAGNETIC SEMICONDUCTOR CD0.95MN0.05S

被引:84
作者
NAWROCKI, M
RUBO, YG
LASCARAY, JP
COQUILLAT, D
机构
[1] UNIV WARSAW, INST EXPTL PHYS, PL-00681 WARSAW, POLAND
[2] INST SEMICOND PHYS, KIEV 252028, UKRAINE
关键词
D O I
10.1103/PhysRevB.52.R2241
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The observation of a strong increase in the photoconductivity of Cd0.95Mn0.05S under an applied magnetic field is reported. The effect, observed at low temperatures, is explained to arise due to the dramatic suppression of the Anger recombination processes involving the excitation of Mn2+ ions ((6)A(1)-->T-4(1(2)) transitions within a 3d shell). The single-ion-assisted Anger recombination, which determines the lifetime of the excess carriers at low magnetic fields, become forbidden for the totally spin-polarized single ions, and at high magnetic field the cluster-assisted Auger recombination dominates.
引用
收藏
页码:R2241 / R2244
页数:4
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