LOW-NOISE INTEGRATED SILICON-GATE FET AMPLIFIER

被引：2

作者：

BOORNARD, A

HERRMANN, E

HSU, ST

机构：

[1] RCA CORP,GOVT & COMMERCIAL SYST DIV,ADV TECHNOL LABS,CAMDEN,NJ 08102

[2] RCA CORP,GOVT COMMERCIAL SYST DIV,ADV TECHNOL LABS,SOMERVILLE,NJ 08876

[3] RCA LABS,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1109/JSSC.1975.1050658

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：542 / 544

页数：3

共 6 条

[1]

ANGELO EJ, 1969, ELECTRONICS BJTS FET, P161

[2] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J].

CHRISTEN.S ;

LUNDSTRO.I ;

SVENSSON, C .

[3] LOW FREQUENCY NOISE IN MOS TRANSISTORS .2. EXPERIMENTS [J].

CHRISTEN.S ;

LUNDSTRO.I .

[4] SURFACE STATE RELATED 1/F NOISE IN MOS TRANSISTORS [J].

HSU, ST .

[5] THEORY OF NOISE IN METAL OXIDE SEMICONDUCTOR DEVICES [J].

JORDAN, AG ;

JORDAN, NA .

[6]

VANDERZIEL A, 1956, NOISE, P39