VERY HIGH-GAIN ND-YLF AMPLIFIERS

被引：4

作者：

KNIGHTS, MG

THOMAS, MD

CHICKLIS, EP

RINES, GA

SEKA, W

机构：

[1] SCHWARTZ ELECTROOPT,CONCORD,MA 01742

[2] UNIV ROCHESTER,LASER ENERGET LAB,ROCHESTER,NY 14623

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 05期

关键词：

D O I：

10.1109/3.186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：712 / 715

页数：4

共 9 条

[1] COMPARISON OF ND 1.06 AND 1.33-MU-M OPERATION IN VARIOUS HOSTS [J].

BARNES, NP ;

GETTEMY, DJ ;

ESTEROWITZ, L ;

ALLEN, RE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) :1434-1451

[2]

JENSSEN HP, COMMUNICATION

[3]

Kaminskii A. A., 1981, LASER CRYSTALS THEIR

[4] GAIN INCREASE IN LASER-AMPLIFIERS BY SUPPRESSION OF PARASITIC-OSCILLATIONS [J].

LABUDDE, P ;

SEKA, W ;

WEBER, HP .

APPLIED PHYSICS LETTERS, 1976, 29 (11) :732-734

[5] PULSED GAIN AND THERMAL LENSING OF ND - LIYF4 [J].

MURRAY, JE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (04) :488-491

[6] CW LASER OPERATION OF ND-YLF [J].

POLLAK, TM ;

WING, WF ;

GRASSO, RJ ;

CHICKLIS, EP ;

JENSSEN, HP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :159-163

[7]

RINES G, IEEE C P CLEO 84 ANA, P114

[8]

SIEGMAN AE, 1986, LASERS, P552

[9]

UPPAL JS, 1984, J APPL PHYS, V58, P3333

← 1 →