DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSES

被引：21

作者：

HSU, SL ^{[1
]}

LIU, LM ^{[1
]}

LIN, MS ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,DEPT ELECTR ENGN,HSINCHU,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期

关键词：

D O I：

10.1109/55.119218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The increase of the "effective" gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and annealed W polycide are analyzed by secondary ion mass spectrometry, transmission electron microscopy (TEM), and high-frequency CV measurements. The TEM cross section shows that the gate oxide thicknesses are approximately 244 and approximately 285 angstrom for as-deposited and 1000-degrees-C annealed samples, respectively. The TEM results agree with that from CV measurements. The TEM analyses provide a direct physical evidence of an additional oxide thickness (approximately 41 angstrom) during the W-polycide annealing.

引用

页码：623 / 625

页数：3

共 4 条

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