TRAPPING CENTER PARAMETERS IN INDIUM SELENIDE SINGLE-CRYSTALS BY THERMALLY STIMULATED CURRENT MEASUREMENTS

被引：49

作者：

MICOCCI, G ^{[1
]}

RIZZO, A ^{[1
]}

TEPORE, A ^{[1
]}

机构：

[1] CNR,NAZL STRUTTURA MAT GRP,LECCE,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.332246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1924 / 1929

页数：6

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