ONE-DIMENSIONAL HETERO-JUNCTION STRUCTURE IN POLYSILANE

被引:11
作者
ISAKA, H
MATSUMOTO, N
机构
[1] NTT Basic Research Laboratories, Musashino
关键词
D O I
10.1063/1.346885
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new model is presented for an electronic structure of polysilane which contains plural phases. This structure corresponds to the heterojunction structure between one-dimensional semiconductors with different band gaps (one-dimensional heterojunction model, 1D HJ model). Measurements of UV absorption, excitation, and emission spectra show that photoexcited energy transfers between phases and recombines radiatively in smaller band-gap regions. The 1D HJ model explains this mechanism and also explains the origin of the large differences in mobilities between electrons and holes in polysilanes.
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页码:6380 / 6382
页数:3
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