NONEXPONENTIAL RELAXATION OF CONDUCTANCE NEAR SEMICONDUCTOR INTERFACES

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[2] FEYNMAN RP, 1972, STATISTICAL MECHANIC, P1

[3] UNIVERSAL DIELECTRIC RESPONSE [J]. NATURE, 1977, 267 (5613) : 673 - 679

[4] ULTRAFAST THIN-FILM GAAS PHOTOCONDUCTIVE DETECTORS [J]. THIN SOLID FILMS, 1982, 92 (03) : 273 - 279

[5] Kohlrausch R., 1847, ANN PHYS-LEIPZIG, V12, P393, DOI [10.1002/andp.18471481102, DOI 10.1002/ANDP.18471481102]

[6] MARTINEZ A, 1984, B AM PHYS SOC, V29, P305

[7] Ngai K. L., 1980, Comments on Solid State Physics, V9, P141

[8] MODELS OF HIERARCHICALLY CONSTRAINED DYNAMICS FOR GLASSY RELAXATION [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (10) : 958 - 961

[9] PONS D, UNPUB 13TH P INT C D

[10] HALL-EFFECT ANALYSIS OF PERSISTENT PHOTOCURRENTS IN N-GAAS LAYERS [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (05) : 401 - 404

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[2] FEYNMAN RP, 1972, STATISTICAL MECHANIC, P1

[3] UNIVERSAL DIELECTRIC RESPONSE [J]. NATURE, 1977, 267 (5613) : 673 - 679

[4] ULTRAFAST THIN-FILM GAAS PHOTOCONDUCTIVE DETECTORS [J]. THIN SOLID FILMS, 1982, 92 (03) : 273 - 279

[5] Kohlrausch R., 1847, ANN PHYS-LEIPZIG, V12, P393, DOI [10.1002/andp.18471481102, DOI 10.1002/ANDP.18471481102]

[6] MARTINEZ A, 1984, B AM PHYS SOC, V29, P305

[7] Ngai K. L., 1980, Comments on Solid State Physics, V9, P141

[8] MODELS OF HIERARCHICALLY CONSTRAINED DYNAMICS FOR GLASSY RELAXATION [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (10) : 958 - 961

[9] PONS D, UNPUB 13TH P INT C D

[10] HALL-EFFECT ANALYSIS OF PERSISTENT PHOTOCURRENTS IN N-GAAS LAYERS [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (05) : 401 - 404