PHASE DIAGRAMS OF SILICON AND GERMANIUM TO 200 KBAR 1000 DEGREE C

被引：183

作者：

BUNDY, FP

机构：

来源：

JOURNAL OF CHEMICAL PHYSICS | 1964年 / 41卷 / 12期

关键词：

D O I：

10.1063/1.1725818

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：3809 / &

共 25 条

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