INSITU MONITORING OF SELECTIVE ETCH OF III-V-COMPOUND SEMICONDUCTOR HETEROSTRUCTURES

被引：8

作者：

HASE, I

TAIRA, K

KAWAI, H

KANEKO, K

WATANABE, N

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584804

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：618 / 620

页数：3

共 6 条

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HASE, I ;

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IMANAGA, S ;

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WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2558-2560

[2] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION [J].

HIKOSAKA, K ;

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[3]

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[4] AN ANALYTICAL STUDY OF ETCH AND ETCH-STOP REACTIONS FOR GAAS ON ALGAAS IN CCL2F2 PLASMA [J].

SEAWARD, KL ;

MOLL, NJ ;

COULMAN, DJ ;

STICKLE, WF .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2358-2364

[5] A GAAS GATE HETEROJUNCTION FET [J].

SOLOMON, PM ;

KNOEDLER, CM ;

WRIGHT, SL .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :379-381

[6] NONINTEGER INAS MONOLAYER WELL INAS/GAAS SINGLE QUANTUM WELL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

TAIRA, K ;

KAWAI, H ;

HASE, I ;

KANEKO, K ;

WATANABE, N .

APPLIED PHYSICS LETTERS, 1988, 53 (06) :495-496

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