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THE ELECTRON-BEAM-INDUCED WATER OXIDATION OF SINGLE-CRYSTAL SILICON
被引：2
作者：
BENNETT, SL
WILLIAMS, EM
机构：
[1] Univ of Liverpool, Liverpool
关键词：
D O I：
10.1088/0268-1242/6/11/013
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
Electron-beam-defined SiO2 has been produced on clean single-crystal substrates, with thickness which suggests a possible application in the accurate definition of small-scale isolating structures in future MOS technology- A mechanism is proposed which links the localization to a surface interaction ejecting hydrogen and generating free surface oxygen.
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页码：1103 / 1105
页数：3
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