EFFECTS OF ELECTRON IRRADIATION OF METAL-NITRIDE-SEMICONDUCTOR INSULATED GATE FIELD-EFFECT TRANSISTORS

被引：7

作者：

STANLEY, AG

WEGENER, HAR

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 05期

关键词：

D O I：

10.1109/PROC.1966.4848

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：784 / &

共 6 条

[1] EFFECTS OF LOW-ENERGY ELECTRON IRRADIATION ON SI-INSULATED GATE FETS (5 KV MOS E/T)
SPETH, AJ
FANG, FF
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 145 - &
[2] EFFECTS OF ELECTRON IRRADIATION ON METAL-OXIDE SEMICONDUCTOR TRANSISTORS
STANLEY, AG
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (06): : 627 - &
[3] EFFECT OF ELECTRON IRRADIATION ON N-CHANNEL MOS TRANSISTORS
STANLEY, AG
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12): : 2150 - &
[4] SPACE-CHARGE MODEL FOR SURFACE POTENTIAL SHIFTS IN SILICON PASSIVATED WITH THIN INSULATING LAYERS
THOMAS, JE
YOUNG, DR
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 368 - +
[5] A NEW INSULATED-GATE SILICON TRANSISTOR
TOMBS, NC
WEGENER, HAR
NEWMAN, R
KENNEY, BT
COPPOLA, AJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (01): : 87 - +
[6] TOMBS NC, 1966 INT SOL STAT C, V9