BAND-STRUCTURE OF GA1-XINXAS

被引：23

作者：

SCHULZE, KR ^{[1
]}

NEUMANN, H ^{[1
]}

UNGER, K ^{[1
]}

机构：

[1] KARL MARX UNIV,ARBEITSGEMEINSCHAFT A3-B5 HALBLEITER,SEKT PHYS,DDR-701 LEIPZIG,GER DEM REP

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1976年 / 75卷 / 02期

关键词：

D O I：

10.1002/pssb.2220750211

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：493 / 500

页数：8

共 39 条

[1] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J].

ABRAHAMS, MS ;

BRAUNSTEIN, R ;

ROSI, FD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) :204-210

[2] BAND-STRUCTURE CALCULATION OF SEMICONDUCTORS AND ALLOYS WITH DIAMOND AND ZINCBLEND-CRYSTAL LATTICES [J].

ANDA, EV ;

MAJLIS, N .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1973, B 15 (02) :225-244

[3] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J].

ANTYPAS, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) :1393-&

[4] PSEUDOPOTENTIAL BAND-STRUCTURE OF SOLID-SOLUTIONS SNSXSE2-X [J].

AYMERICH, F ;

MELONI, F ;

MULA, G .

SOLID STATE COMMUNICATIONS, 1973, 12 (02) :139-141

[5]

Aymerich F., 1970, Physica Status Solidi, V42, P697, DOI 10.1002/pssb.19700420224

[6] BAND-STRUCTURE OF SEMICONDUCTOR ALLOYS BEYOND VIRTUAL CRYSTAL APPROXIMATION, EFFECT OF COMPOSITIONAL DISORDER ON ENERGY GAPS IN GAPXAS1-X [J].

BALDERESCHI, A ;

MASCHKE, K .

SOLID STATE COMMUNICATIONS, 1975, 16 (01) :99-102

[7]

BALDERESCHI A, COMMUNICATION

[8]

BASHENOV VK, 1975, FIZ TEKH POLUPROV, V8, P2145

[9] EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS [J].

BEROLO, O ;

WOOLLEY, JC ;

VANVECHT.JA .

PHYSICAL REVIEW B, 1973, 8 (08) :3794-3798

[10]

BURDUKOV YM, 1975, FIZ TEKH POLUPROV, V9, P488

← 1 2 3 4 →