RECENT RESULTS WITH EPITAXIAL GAAS GUNN EFFECT OSCILLATORS

被引：33

作者：

BRADY, DP

KNIGHT, S

LAWLEY, KL

UENOHARA, M

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 10期

关键词：

D O I：

10.1109/PROC.1966.5172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1497 / +

页数：1

共 5 条

[1] MICROWAVE PHENOMENA IN BULK GAAS [J].

HAKKI, BW ;

KNIGHT, S .

[2] MICROWAVE OSCILLATIONS IN EPITAXIAL LAYERS OF GAAS [J].

HASTY, TE ;

CUNNINGHAM, PA ;

WISSEMAN, WR .

[3] NOISE SPECTRA OF READ DIODE AND GUNN OSCILLATORS [J].

JOSENHANS, J .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1478-+

LAWLEY, KL .

[5]

LAWLEY KL, SUBMITTED FOR PUBLIC