AN XPS STUDY OF HAFNIUM NITRIDE FILMS

被引：39

作者：

PERRY, AJ ^{[1
]}

SCHLAPBACH, L ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,FESTKORPERPHYS LAB,CH-8093 ZURICH,SWITZERLAND

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 56卷 / 10期

关键词：

FILMS - Physical Properties;

D O I：

10.1016/0038-1098(85)90416-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

XPS spectra are presented from films of different stoichiometry: HfN//1//. //0 made by CVD and reactive sputtering and HfN//1//. //0//9 made by ion plating. They support the existing theoretical calculations where the valence band comprises a strong Hf 5d band immediately below E//F and a band of mainly N 2p character some 6 ev below E//F. The core levels are shifted to larger binding energies by about 1. 5 ev indicating electron transfer from hafnium to nitrogen. The effect of substoichiometry on the spectra is very small.

引用

页码：837 / 841

页数：5

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