RADIATION FROM THE CHANNELING OF 10-GEV POSITRONS BY SILICON SINGLE-CRYSTALS

被引：19

作者：

FILATOVA, NA

GOLOVATYUK, VM

ISKAKOV, AN

IVANCHENKO, IM

KADYROV, RB

KARPENKO, NN

NIGMANOV, TS

PALCHIK, VV

RIABTSOV, VD

SHAFRANOV, MD

TSYGANOV, EN

TYAPKIN, IA

URALSKI, DV

FORYCKI, A

GUZIK, Z

WOJTKOWSKA, J

CARRIGAN, RA

TOOHIG, TE

CARMACK, C

GIBSON, WM

KIM, IJ

SUN, CR

BAVIZHEV, MD

BULGAKOV, NK

ZIMIN, NI

GRISHAEV, IA

KOVALENKO, GD

SHRAMENKO, BI

DENISOV, EI

GLEBOV, VI

AVDEICHIKOV, VV

机构：

[1] INST NUCL RES,PL-05400 SWIERK,POLAND

[2] FERMI NATL ACCELERATOR LAB,BATAVIA,IL 60510

[3] SUNY ALBANY,ALBANY,NY 12222

[4] SM KIROV POLYTECH INST,TOMSK,USSR

[5] ACAD SCI UKSSR,INST ENGN PHYS,KHARKOV 108,UKSSR

[6] IV KURCHATOV ATOM ENERGY INST,MOSCOW,USSR

[7] VG KHLOPIN RADIUM INST,LENINGRAD 197022,USSR

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 48卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.48.488

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：488 / 492

页数：5

共 8 条

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[4]

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[8] ELECTROMAGNETIC-RADIATION OF RELATIVISTIC POSITRONS AND ELECTRONS DURING AXIAL AND PLANAR CHANNELING IN MONOCRYSTALS [J].

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