Source second-harmonic control for high efficiency power amplifiers

被引：48

作者：

Maeda, M ^{[1
]}

Masato, H ^{[1
]}

Takehara, H ^{[1
]}

Nakamura, M ^{[1
]}

Morimoto, S ^{[1
]}

Fujimoto, H ^{[1
]}

Ota, Y ^{[1
]}

Ishikawa, O ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,DISCRETE DEV DEPT,KYOTO 617,JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1995年 / 43卷 / 12期

关键词：

D O I：

10.1109/22.475660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel technology that drastically improves output power and efficiency of amplifiers has been developed, where source and load second-harmonic impedances, as well as the fundamental impedances, are optimally terminated in the input and output matching circuits, A record high 74% power-added efficiency (PAE) with 31.4 dBm (1.4 W) output power at a frequency of 930 MHz has been achieved as a single-stage saturated amplifier using an ion-implanted GaAs MESFET under the low supply voltage of 3.5 V. As a single-stage linear amplifier, an excellent PAE of 59% with 31.5 dBm output power has been realized at V-d = 4.7 V and f = 948 MHz. Saturated and linear two-stage power modules operating at 900 MHz band with 31 dBm (1.25 W) output power have been demonstrated for analog and digital cellular applications respectively, the volume of which is as small as 0.4 cc. The saturated power module has achieved a PAE of 66% at V-d = 3.5 V, and the linear one has realized a PAE of 50% at V-d = 4.7 V.

引用

页码：2952 / 2958

页数：7

共 15 条

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